U.S. Patents Awarded to Inventors in Idaho (May 18)
The cavities increase the impedance between the semiconductor substrate and the fin and/or pillars to decrease the sub-threshold leakage of the FinFET transistor." The patent application was filed on Sept. 8, 2011 (13/227982).
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U.S. Patents Awarded to Inventors in Arizona (May 25)
The supply voltage control signal is generated responsive to the measured or estimated power of the PA RF output signal, and also may be responsive to a parameter indicative of impedance mismatch experienced at the PA output. By controlling this supply …
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